Recombination processes in pyrolytic cadmium sulfide films
Autor: | V. G. Klyuev, T. L. Maiorova |
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Rok vydání: | 2009 |
Předmět: | |
Zdroj: | Semiconductors. 43:292-296 |
ISSN: | 1090-6479 1063-7826 |
DOI: | 10.1134/s1063782609030063 |
Popis: | The study concerns the photoelectric properties of pyrolytic CdS films, both undoped and doped with alkali metals. It is established that the films exhibit a long relaxation time of the photoconductivity at room temperature (t = 103−104 s). The long relaxation is due to internal potential barriers between regions different in conductivity. The activation energy of the stored-up conductivity is determined at E = 0.68 eV. By thermostimulated conductivity studies of the films, three types of electron localization levels are found. These are related to sulfur vacancies (0.48 eV), oxygen substituting for sulfur (0.5 eV), and adsorbed alkali metal atoms (0.53 eV). On the basis of the results of studies of recombination processes, the model of energy levels in the band gap of pyrolytic CdS films doped with alkali metals is developed. |
Databáze: | OpenAIRE |
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