A self-aligned EPROM structure with superior data retention

Autor:	C. Hart, Peter Nicholas Manos
Rok vydání:	1990
Předmět:	Materials science Passivation business.industry Dielectric Chemical vapor deposition Nitride Electronic Optical and Magnetic Materials Electronic engineering Optoelectronics Electrical and Electronic Engineering EPROM Data retention business Phosphosilicate glass Nitriding
Zdroj:	IEEE Electron Device Letters. 11:309-311
ISSN:	1558-0563 0741-3106
DOI:	10.1109/55.56484
Popis:	A structure that exhibits superior data retention, compared to the conventional erasable programmable read-only memory (EPROM) cell, while still using phosphosilicate glass (PSG) passivation, is described. The nitrided self-aligned MOS (NIT-SAMOS) employs a thin layer of low-pressure chemical vapor deposition (LPCVD) nitride between the double-poly-gate structure and the poly-metal isolation dielectric, to reduce the possibility of contamination of the floating-gate area. Comparisons are made of EPROM data retention lifetimes, programmability, and UV erasability, and n- and p-channel device parameters. >
Databáze:	OpenAIRE
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