Autor: |
Patrick Cassoux, C. Danjoy, Robert Choukroun, Lydie Valade, D. de Caro, Benoît Chansou |
Rok vydání: |
1998 |
Předmět: |
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Zdroj: |
Annales de Chimie Science des Matériaux. 23:721-732 |
ISSN: |
0151-9107 |
DOI: |
10.1016/s0151-9107(99)80019-1 |
Popis: |
Monometallic and heterobtmetallic titanium and vanadium compounds were prepared and studied as precursors to the chemical vapor deposition (CVD) of carbide and nitride ceramic thin films. Their thermal properties are discussed according to the chemical environment of the metal atom and their CVD behavior is studied. Two of them, CpTiCl 2 N(SiMe 3 ) 2 and Cp 2 VMe 2 , are applied to the deposition of thin films within the Ti-V-C-N quaternary system. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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