Radiated reliability for 0.35μm SiGe BiCMOS technology
| Autor: | Tan Kaizhou, Xue Wu, Yonghui Yang, Zhu Kunfeng, Zhaohuan Tang, Wei Cui |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
010308 nuclear & particles physics business.industry Heterojunction bipolar transistor Transistor 01 natural sciences Threshold voltage Silicon-germanium law.invention chemistry.chemical_compound Reliability (semiconductor) chemistry law 0103 physical sciences MOSFET Optoelectronics Irradiation 010306 general physics business NMOS logic |
| Zdroj: | 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). |
| DOI: | 10.1109/ipfa.2017.8060127 |
| Popis: | An investigation of radiated reliability of HBT and MOSFET which fabricated on 0.35 μm SiGe BiCMOS technology is presented under dose rates of 500 mGy(Si)/s and 1 mGy(Si)/s with a 60Co γ irradiation source. Gummel characteristics of SiGe HBT and transfer characteristics of MOSFET are measured before and after irradiation. Base current (IB), leakage current (IOFF) and threshold voltage (VTH) are extracted from gummel and transfer characteristics. Our results show that there is a slight increase in IB and an observed decrease in β for SiGe HBT device. For NMOS transistor, a conspicuous increase in IOFF and slight drift in vt H . No dose-rate effect has been seen in SiGe HBT devices; however, it has been observed in NMOS transistors. |
| Databáze: | OpenAIRE |
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