Spin–orbit torque controllable complete spin logic in a single magnetic heterojunction
| Autor: | S. S. Yan, Xiaonan Zhao, Yingcai Fan, Lihui Bai, Youyong Dai, Yanan Dong, Xuejie Xie, Yufeng Tian, X. Han, Yanxue Chen |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Physics Coupling Hardware_MEMORYSTRUCTURES Physics and Astronomy (miscellaneous) 02 engineering and technology 021001 nanoscience & nanotechnology Topology 01 natural sciences Magnetic field Non-volatile memory Exchange bias Hall effect Logic gate 0103 physical sciences 0210 nano-technology Realization (systems) Spin-½ |
| Zdroj: | Applied Physics Letters. 118:152403 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | The realization of complete spin logic within a single nonvolatile memory cell is a promising approach toward next-generation low-power stateful logic circuits. In this work, we demonstrate that all 16 Boolean logic functions can be realized within a single four-state nonvolatile IrMn/Co/Ru/CoPt magnetic heterojunction, where controllable field-free spin–orbit torque switching of the perpendicularly magnetized CoPt alloy is obtained, relying on the interlayer exchange coupling and exchange bias effect. By assigning different values to four variables of the four-state memory, that is, the initial control current pulse, the initial control magnetic field, and the input electrical potential of two terminals, in sequentially three steps, the complete Boolean logic functions are realized, while the anomalous Hall voltage of the devices is considered as logic output. The coexistence of nonvolatile four-state memory and complete spin logic functions holds promising application for future computing systems beyond von Neumann architecture. |
| Databáze: | OpenAIRE |
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