Epitaxial stabilization—a tool for synthesis of new thin film oxide materials
| Autor: | O.a. Gorbenko, O.b. Boytsova, A.b. Kamenev, M.b. Kartavtseva, A.b. Bosak, M.b. Novojilov, A.a. Mikhaylov, A.a. Kaul |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
business.industry Oxide Chemical vapor deposition Combustion chemical vapor deposition Condensed Matter Physics Epitaxy Instability Inorganic Chemistry chemistry.chemical_compound Planar chemistry Materials Chemistry Optoelectronics Metalorganic vapour phase epitaxy Thin film business |
| Zdroj: | Journal of Crystal Growth. 275:e2445-e2451 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2004.11.358 |
| Popis: | In the paper, it is seen that many oxides can be obtained as thin epitaxial films in spite of the thermodynamic instability of corresponding bulk materials at the film deposition conditions. This synthetic approach, named epitaxial stabilization (ES), is based on free-energy gain due to structural coherence at the film/substrate interface and can be effectively used to enlarge the spectrum of new functional materials. A thermodynamic model of ES was developed and its validity was confirmed by the author's results on the stabilization of numerous rare earth compounds with garnet, perovskite and hexagonal structures in the form of epitaxial films obtained by metal-organic chemical vapor deposition (MOCVD) technique. The use of ES for selective epitaxy in the preparation of the planar structures is demonstrated. |
| Databáze: | OpenAIRE |
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