EUV Lithography optics contamination and lifetime studies

Autor:	Thomas B. Lucatorto, B. V. Yakshinskii, Theodore E. Madey, Shannon B. Hill, Nadir S. Faradzhev
Rok vydání:	2010
Předmět:	Materials science business.industry Extreme ultraviolet lithography General Physics and Astronomy Electron Partial pressure Contamination Secondary electrons Optics Extreme ultraviolet Astrophysics::Solar and Stellar Astrophysics Optoelectronics Irradiation business Lithography
Zdroj:	Bulletin of the Russian Academy of Sciences: Physics. 74:28-32
ISSN:	1934-9432 1062-8738
DOI:	10.3103/s1062873810010089
Popis:	In this paper we discuss surface phenomena leading to contamination of multilayer optics designed for Extreme Ultraviolet (EUV) lithography. Experimental data supported by calculations indicate dramatic influence of resonance structure of EUV mirror on the secondary electron yield. These low energy electrons play an important role in radiation chemistry at the mirror surface. We also discuss the dependence on the partial pressure of admitted gas of equilibrium surface coverage and contamination rate under EUV irradiation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1c3b94f04202fcb42faed6a7893a43ce https://doi.org/10.3103/s1062873810010089 Zobrazit plný text záznamu Full text from SpringerLink