Dielectric SiO2 Planarization Using MnO2 Slurry

Autor:	Sadahiro Kishii, Kenzo Hanawa, Yoshihiro Arimoto, Syuhei Kurokawa, Satoru Watanabe, Ko Nakamura, Toshiro Doi
Rok vydání:	2011
Předmět:	Materials science Metallurgy Abrasive General Engineering General Physics and Astronomy Polishing Dielectric Gibbs free energy symbols.namesake Chemical engineering Chemical-mechanical planarization Slurry symbols Wafer Data scrubbing
Zdroj:	Japanese Journal of Applied Physics. 51:016501
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.51.016501
Popis:	MnO2 slurry can polish SiO2 film faster and planarize wide feature steps (2 ×2 mm2) to a lower height than conventional silica slurry. A comparison of Gibbs free energies indicates that the MnO2 abrasive directly reacts on the SiO2 film. In post-Chemical mechanical polishing (CMP), the MnO2 abrasive can be completely removed by dipping it in mixed solutions of inorganic acids and H2O2 followed by scrubbing and dipping in HF solution. A comparison of Gibbs free energies clarifies that the MnO2 abrasive on the wafer is easily dissolved in a mixed solution of an inorganic acid and H2O2.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1c38cfb838d96b38941ed17ff56642c5 https://doi.org/10.1143/jjap.51.016501 Zobrazit plný text záznamu