Direct Optical Energy Gap in Amorphous Silicon Quantum Dots

Autor:	Nidhal M. Abdul-Ameer, Moafak Cadim Abdulrida
Rok vydání:	2011
Předmět:	Amorphous silicon Photoluminescence Materials science Band gap business.industry Spectral line Blueshift chemistry.chemical_compound chemistry Quantum dot Quantum dot laser Optoelectronics business Quantum
Zdroj:	Journal of Modern Physics. :1530-1537
ISSN:	2153-120X 2153-1196
DOI:	10.4236/jmp.2011.212185
Popis:	A theoretical investigation of photoluminescence spectra for amorphous silicon quantum-dots (1 - 4 nm), at room temperature, were used to study the effect of both spatial and quantum confinements spontaneously via determination the energy peak of maximum intensity transition. The results show a continuous shifting toward low energy peak (red shift) and toward high-energy peak (blue shift), with the decreasing of quantum dot size, due to spatial and quantum confinements respectively. These results have leaded us to believe that such quantum dot size (1 nm) changes the nature of amorphous silicon optical band gap from indirect to direct transition material.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1c33deb5b4424623893c0f08a4985da0 https://doi.org/10.4236/jmp.2011.212185 Zobrazit plný text záznamu