A 0.5/spl mu/m Diode Load 4Mb Sram Technology Using Double-Level Al Plug Metal Process

Autor:	Charles R. Spinner, C.C. Wei, W. Gaskins, F.T. Liou, J. Huang, Frank Randolph Bryant, Pervez Hassan Sagarwala, Y.S. Lin, G.S. Stagaman, W. Hata, Robert Louis Hodges, Mehdi Zamanian, R.O. Miller, F.S. Chen, L. Nguyen, Ravi Sundaresan
Rok vydání:	1991
Předmět:	Materials science business.industry Transistor Process (computing) Electrical engineering chemistry.chemical_element law.invention Metal chemistry law visual_art visual_art.visual_art_medium Static random-access memory Resistor business Spark plug Tin Diode
Zdroj:	1991 Symposium on VLSI Technology.
DOI:	10.1109/vlsit.1991.705974
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1c2d93da2baada79e22f4da9e1419145 https://doi.org/10.1109/vlsit.1991.705974 Zobrazit plný text záznamu