| Autor: |
Jong-Ho Bae, Jangsaeng Kim, Won-Mook Kang, Byung-Gook Park, Jong-Ho Lee, Sung Yun Woo, Chul-Heung Kim, Kyu-Bong Choi |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
2019 Electron Devices Technology and Manufacturing Conference (EDTM). |
| DOI: |
10.1109/edtm.2019.8731117 |
| Popis: |
A scaled positive feedback (PF) device based on 14 nm FinFET technology is systematically investigated by using TCAD simulation tool. By adapting multiple gates to a scaled PF device, electrical electron and hole injection barriers are formed without dopant implantation for implementing the PF operation. In addition, the characteristics with steep subthreshold swing (SS) are performed by hole and electron concentrations stored in charge storage layers of the scaled PF device. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
