Switching phenomena in boron-implanted amorphous carbon films
| Autor: | R. U. A. Khan, S. R. P. Silva |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
Mechanical Engineering chemistry.chemical_element General Chemistry Space charge Electronic Optical and Magnetic Materials Amorphous solid Field electron emission Ion implantation chemistry Amorphous carbon Materials Chemistry Electrical and Electronic Engineering Thin film Composite material Boron Carbon |
| Zdroj: | Diamond and Related Materials. 10:1036-1039 |
| ISSN: | 0925-9635 |
| Popis: | Amorphous hydrogenated carbon (a-C:H) has been extensively researched as an electronic material. In this study, a-C:H is implanted with boron ions at a dose of 2×1015 cm−2. It is observed that the current versus voltage shows a number of distinct conduction regimes. The likely mechanism is a combination of space charge and barrier effects. A uniform implant throughout the film results in symmetrical characteristics, whilst an implant through only the first half of the film results in switching only on one side, reinforcing the suggestion that the conduction mechanism is barrier controlled. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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