Dependences of structural and electrical properties on thickness of polycrystalline Ga-doped ZnO thin films prepared by reactive plasma deposition
| Autor: | Takahiro Yamada, Kiyoshi Awai, T. Nebiki, Tetsuya Yamamoto, Seiichi Kishimoto, T. Narusawa, Hisao Makino |
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| Rok vydání: | 2007 |
| Předmět: |
Diffraction
Materials science business.industry Doping Analytical chemistry Condensed Matter Physics Full width at half maximum Optics Electrical resistivity and conductivity General Materials Science Crystallite Electrical and Electronic Engineering Thin film business Deposition (law) Wurtzite crystal structure |
| Zdroj: | Superlattices and Microstructures. 42:68-73 |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/j.spmi.2007.04.080 |
| Popis: | Polycrystalline Ga-doped (Ga content: 4 wt%) ZnO (GZO) thin films were deposited on glass substrates at 200 ∘C by a reactive plasma deposition with DC arc discharge technique. The dependences of structural and electrical properties of GZO films on thickness, ranging from 30 to 560 nm, were investigated. Carrier concentration, n , and Hall mobility, μ , increases with increasing film thickness below 100 nm, and then the n remains nearly constant and the μ gradually increases until the thickness reaches 560 nm. The resistivity obtained of the order of 10−4 Ω cm for these films decreases with increasing film thickness: The highest resistivity achieved is 4.4×10−4 Ω cm with n of 7.6×1020 cm−3 and μ of 18.5 cm2/V s for GZO films with a thickness of 30 nm and the lowest one is 1.8×10−4 Ω cm with n of 1.1×1021 cm−3 and μ of 31.7 cm2/V s for the GZO film with a thickness of 560 nm. X-ray diffraction pattern for all the films shows a hexagonal wurtzite structure with its strongly preferred orientation along the c -axis. Full width at half maximum of the (002) preferred orientation diffraction peak of the films decreases with increasing film thickness below 100 nm. |
| Databáze: | OpenAIRE |
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