Properties of AgInSe2 films grown by magnetron sputtering

Autor:	P. P. Khokhlachev, M. A. Abdullaev, D. Kh. Magomedova, A. K. Akhmedov
Rok vydání:	2012
Předmět:	Materials science Annealing (metallurgy) Band gap General Chemical Engineering Metals and Alloys Analytical chemistry Crystal structure Sputter deposition Inorganic Chemistry Hall effect Electrical resistivity and conductivity Materials Chemistry Optimal growth Stoichiometry
Zdroj:	Inorganic Materials. 48:987-990
ISSN:	1608-3172 0020-1685
DOI:	10.1134/s0020168512090014
Popis:	n-Type AgInSe2 films 0.5 to 0.9 μm thick were grown by dc magnetron sputtering. As targets, we used AgInSe2 crystals grown by a modified Bridgman process using high-purity precursors. The crystal structure, morphology, electrical conductivity, and Hall coefficient of the films were studied at various temperatures. We determined the optimal growth and annealing temperatures of the films (500 and 250°C, respectively). Using structures based on the films, we obtained the spectral dependences of their photoresponse, established the nature of interband transitions in the films, and evaluated their band gap. The ability to vary electrical and optical properties with no changes in stoichiometry is of interest for concentrated solar power applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1c1901e91f4d4f5d95e997202cb0dc39 https://doi.org/10.1134/s0020168512090014 Zobrazit plný text záznamu Plný text ve formátu PDF