Phase separation in SiOxfilms annealed under enhanced hydrostatic pressure

Autor:	P.E. Shepeliavyi, G. Yu. Rudko, I. Yu. Maidanchuk, I. Z. Indutnyy, E. G. Gule, A. Misiuk
Rok vydání:	2008
Předmět:	Suboxide Photoluminescence Silicon Annealing (metallurgy) Hydrostatic pressure Analytical chemistry chemistry.chemical_element Infrared spectroscopy Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention chemistry law Crystallization Ambient pressure
Zdroj:	physica status solidi (b). 245:2756-2760
ISSN:	1521-3951 0370-1972
Popis:	The effect of enhanced hydrostatic pressure (HP, (10–12) × 108 Pa) on thermally stimulated phase decomposition of silicon suboxide layers processed at 450–1000 °C was investigated by infrared spectroscopy and photoluminescence measurements. HP stimulates decomposition of non-stoichiometric SiOx most efficiently at about 450 °C. In spite of enhanced SiOx decomposition, visible photoluminescence appears in HP-treated samples at higher annealing temperatures in comparison to those annealed under ambient pressure (AP, 105 Pa). Contrary to that, application of HP results in essential enhancement of near-infrared emission at lower annealing temperatures as compared to processing under AP. This can be related to pressure-stimulated crystallization of Si inclusions. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1c15027cf67906713c37373d0c73ec73 https://doi.org/10.1002/pssb.200844049 Zobrazit plný text záznamu Plný text