Autor: |
Kazuo Kohmura, Shoko Ono, Hirofumi Tanaka, Tsuneji Suzuki, Yasuhisa Kayaba |
Rok vydání: |
2014 |
Předmět: |
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Zdroj: |
IEEE International Interconnect Technology Conference. |
DOI: |
10.1109/iitc.2014.6831890 |
Popis: |
A strategy for the selective formation of a pore sealing layer on mesoporous low-k applicable for a Cu dual damascene interconnection process is herein proposed. An ultra-thin, adhesive, and conformal pore sealing layer was formed on mesoporous low-k by spin coating macromolecules. The pore sealant on the Cu surface was selectively decomposed with the help of Cu 2 O induced oxidization. This selective removal was also examined for patterned structure. Our simple and novel technique will help the integration of ulta-low-k materials in LSI devices. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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