Structurally perfect silicon layers produced on sapphire by oxygen ion implantation
| Autor: | V. A. Gerasimov, V. M. Vorotyntsev, E. L. Shobolov |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Materials science
Silicon business.industry General Chemical Engineering Metals and Alloys Nanocrystalline silicon chemistry.chemical_element Recrystallization (metallurgy) Strained silicon Inorganic Chemistry Crystallography chemistry Silicon on sapphire Materials Chemistry Oxygen ions Sapphire Optoelectronics business Inert gas |
| Zdroj: | Inorganic Materials. 47:571-574 |
| ISSN: | 1608-3172 0020-1685 |
| Popis: | We demonstrate that the structural perfection of silicon layers on sapphire can be improved through high-temperature solid-state recrystallization after preamorphization of the most imperfect silicon layer near the silicon/sapphire interface by high-energy oxygen ions, followed by high-temperature recrystallization in an inert atmosphere. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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