Watt-Level, Direct RF Modulation in CMOS SOI With Pulse-Encoded Transitions for Adjacent Channel Leakage Reduction
| Autor: | Ahmed Hamza, Cameron Hill, James F. Buckwalter, Hussam AlShammary |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Third-order intercept point
Total harmonic distortion Radiation Materials science business.industry 020206 networking & telecommunications Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Condensed Matter Physics Switching time CMOS Modulation Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Adjacent channel Optoelectronics Radio frequency Electrical and Electronic Engineering business Leakage (electronics) |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 67:5315-5328 |
| ISSN: | 1557-9670 0018-9480 |
| DOI: | 10.1109/tmtt.2019.2951565 |
| Popis: | This article reports signal processing and circuit techniques for direct RF signal modulation. A pulse-encoded transition (PET) technique is introduced to reduce undesired harmonic distortion (HD) and adjacent channel leakage ratio (ACLR) generated by the direct RF modulation. To enable PET RF switching, two variations of a high-power, stacked-FET switch modulator, an 8- and 12-device stack, are designed in 45-nm silicon on insulator (SOI) CMOS. The switch design uses a tapering design to significantly improve power handling with minimal impact to switching speed. The modulators have $P_{1\,{\mathrm{ dB}}} $ values between 34 and 39 dBm while demonstrating a modulation bandwidth of nearly 500 MHz with a 1-GHz carrier. The input referred third order intercept point (IIP3) is between 46 and 61 dBm. Additionally, ACLR measurements of up to −50 dBc are demonstrated using the proposed PET technique at 30-dBm output power. To the best of our knowledge, this is record power handling and ACLR for a CMOS switch. |
| Databáze: | OpenAIRE |
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