Nanosecond Pulsed Laser Patterning of Interdigitated Back Contact Heterojunction Silicon Solar Cells
| Autor: | Arpan Sinha, Anishkumar Soman, Ujjwal Das, Steven Hegedus, Mool C. Gupta |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Laser ablation Passivation business.industry Heterojunction 02 engineering and technology Carrier lifetime 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Pulsed laser deposition law.invention symbols.namesake law Ellipsometry 0103 physical sciences Solar cell symbols Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Raman spectroscopy |
| Zdroj: | IEEE Journal of Photovoltaics. 10:1648-1656 |
| ISSN: | 2156-3403 2156-3381 |
| DOI: | 10.1109/jphotov.2020.3026907 |
| Popis: | Careful control of the laser patterning for the fabrication of an interdigitated back contact heterojunction (IBC-HJ) solar cell is needed to avoid laser-induced defects and heat-induced crystallization, which can produce higher carrier recombination and lower power conversion efficiency. The results of nanosecond laser patterning of an IBC-HJ test structure are reported, and it was shown that optimized laser ablation conditions using a sacrificial layer eliminates laser-induced damage of the underlying passivation layer. A rigorous set of characterizations, comprising of minority carrier lifetime, spatially resolved μ-photoluminescence, optical microscopy, ellipsometry, Essential Macleod program simulations, scanning electron microscopy, line-mapping energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy, were undertaken to provide a deeper understanding of the nanosecond laser processing under a wide range of laser fluence. The evolving changes in surface morphologies of top sacrificial a-Si and SiNx and the use of color chart simulation for ablation-depth analysis were investigated. The μ-photoluminescence, carrier lifetime, and crystallinity in the passivation layer were evaluated. The trend in the change in the surface chemical constituency was determined in terms of Si/N ratio. Finally, the minimum laser fluence for the IBC-HJ test structure was determined and a negligible change in the implied open-circuit voltage was demonstrated. |
| Databáze: | OpenAIRE |
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