In-depth profiling of the SiO2/Si-interface electronic structure using low-energy electron energy loss spectroscopy
| Autor: | Kurogi Yukinori, Aoto Nahomi, Ikawa Eiji, Endo Nobuhiro |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
Suboxide
Silicon Electron energy loss spectroscopy Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Electronic structure Condensed Matter Physics Electron spectroscopy Surfaces Coatings and Films chemistry X-ray photoelectron spectroscopy Materials Chemistry Thin film Layer (electronics) Nuclear chemistry |
| Zdroj: | Surface Science. 234:121-126 |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/0039-6028(90)90671-t |
| Popis: | The SiO2/Si-interface of a thin oxide layer formed thermally under low O2 pressure is investigated. The electronic structure and the chemical bondings are analyzed with low-energy electron energy loss spectroscopy and X-ray photoelectron spectroscopy. The combined results show that either a Si2+ suboxide layer or a layer which contains a considerable amount of Si2+ is localized at the SiO2/Si interface region with a thickness of 2–3 A. |
| Databáze: | OpenAIRE |
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