Heavy charged particle detectors based on high-resistivity epitaxial silicon layers
| Autor: | E. Nossarzevska, Yu. G. Sobolev, E. Bialkowski, V. F. Kushniruk, E. Sarnecki |
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| Rok vydání: | 2000 |
| Předmět: |
Materials science
Physics::Instrumentation and Detectors business.industry Resolution (electron density) Epitaxial silicon Heterojunction High resistivity Charged particle detectors Depletion region Optoelectronics Structure based Atomic physics Nuclear Experiment business Charged particle beam Instrumentation |
| Zdroj: | Instruments and Experimental Techniques. 43:597-601 |
| ISSN: | 1608-3180 0020-4412 |
| DOI: | 10.1007/bf02759067 |
| Popis: | A technique for manufacturing heavy charged particle detectors based on high-resistance epitaxial silicon layers is described. The special feature of this technique is the design of a rectifying structure based on a Pd2Si−Si heterojunction. The intrinsic resolution obtainedR int=17 keV for α-particles of238Pu (E α=5.49 MeV) demonstrates that it is possible to design heavy charged particle detectors based on epitaxial silicon layers with good spectrometric characteristics. |
| Databáze: | OpenAIRE |
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