Mobility spectrum approach in the analysis of the electrical conduction of a GaAs layer grown by molecular beam epitaxy
| Autor: | K. Regiński, J. Marczewski, E. Grodzicka, Z. Dziuba |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Electron mobility
Materials science business.industry Doping General Physics and Astronomy Epitaxy Magnetic field Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound chemistry Electrical resistivity and conductivity Optoelectronics business Molecular beam Molecular beam epitaxy |
| Zdroj: | Journal of Applied Physics. 82:6102-6106 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.366481 |
| Popis: | A new algorithm of the analysis of the electrical conduction in the layers forming a semiconductor structure has been described. In the algorithm, in contrast to earlier approaches, the mobility spectrum technique has been applied to the sheet conductivity tensor. The standard carriers parameters have been estimated from the tensor components in the high and low magnetic field limits. The proposed method has been illustrated by the analysis of results of the electrical conduction measurements versus magnetic field performed up to 1.6 T at 77 K in a molecular beam epitaxial (MBE) grown GaAs:Si structure. The sample was an MBE GaAs:Si layer grown on a buffer epilayer. As a result of the analysis, the mobility spectra and the standard parameters describing carriers in different layers have been found. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|