The characteristics of EPI-SI thin film in electron cyclotron resonance plasma examined by an integrated plasma diagnostic sub-system
Autor: | I-Chen Chen, Tomi T. Li, Y. W. Lin, L. C. Hu, C. R. Yang, T. C. Wei, C. J. Wang, Jenq Yang Chang, S. K. Jou, C. C. Lee |
---|---|
Rok vydání: | 2016 |
Předmět: |
010302 applied physics
Chemistry Analytical chemistry 02 engineering and technology Chemical vapor deposition Combustion chemical vapor deposition 021001 nanoscience & nanotechnology 01 natural sciences Electron cyclotron resonance Carbon film Plasma-enhanced chemical vapor deposition Optical Emission Spectrometer 0103 physical sciences Thin film 0210 nano-technology Plasma processing |
Zdroj: | 2016 China Semiconductor Technology International Conference (CSTIC). |
DOI: | 10.1109/cstic.2016.7464020 |
Popis: | In this study, OES (Optical emission spectrometer) was used to diagnose the variations of plasma species. QMS (Quadrupole mass spectrometry) was utilized to examine the concentration of free radicals in plasma. The epitaxial silicon thin film was deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD). The film properties related to thickness and crystallinity were investigated by Ellipsometer and Raman Spectrometer. The relationship between the film quality and plasma characteristics with respect to hydrogen dilution ratio of H2/SiH4 was also discussed. Three growth mechanisms were proposed to explain the effect on the crystallization of epi-si thin films based on adding hydrogen atoms to help the crystallization. |
Databáze: | OpenAIRE |
Externí odkaz: |