On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures
| Autor: | B. N. Zvonkov, O. V. Vikhrova, Aleksey Nezhdanov, S. M. Plankina, I. Yu. Pashen’kin, S. Yu. Zubkov, R. N. Kriukov, A. A. Sushkov, D. A. Pavlov |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence business.industry Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Photodiode law.invention symbols.namesake law 0103 physical sciences symbols Optoelectronics 0210 nano-technology business Raman spectroscopy Spectroscopy Solid solution |
| Zdroj: | Semiconductors. 53:1207-1210 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782619090148 |
| Popis: | The results of studying GaInAs/GaInP/GaAs photodiode structures grown by metal–organic vapor-phase epitaxy are reported. A procedure for the diagnostics of such multilayer structures is developed. The procedure is based on the application of Raman spectroscopy in combination with photoluminescence spectroscopy in the mode of the lateral scanning of transverse cleavages. The compositions of the GaInAs and GaInP solid solutions are determined. |
| Databáze: | OpenAIRE |
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