Optical Properties of A-Plane InGaN/GaN Multiple Quantum Wells Grown on Nanorod Lateral Overgrowth Templates
| Autor: | Tien-Chang Lu, Hao-Chung Kuo, Wei-Wen Chan, Shing-Chung Wang, Huei Min Huang, Shih-Chun Ling |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Photoluminescence business.industry Wide-bandgap semiconductor Gallium nitride Condensed Matter Physics Atomic and Molecular Physics and Optics law.invention chemistry.chemical_compound symbols.namesake chemistry Stark effect law symbols Optoelectronics Nanorod Quantum efficiency Spontaneous emission Electrical and Electronic Engineering business Light-emitting diode |
| Zdroj: | IEEE Journal of Quantum Electronics. 47:1101-1106 |
| ISSN: | 1558-1713 0018-9197 |
| DOI: | 10.1109/jqe.2011.2158632 |
| Popis: | A-plane InGaN/GaN multiple-quantum wells (MQWs) were grown on a series of nanorod epitaxial lateral overgrowth (NRELOG) templates with varied nanorod depth. Optical properties of these samples were investigated by excitation power and temperature-dependent photoluminescence (PL). Due to the absence of quantum-confined Stark effect, the negligible PL emission peak shift and nearly identical power index for all samples were observed. In contrast to the as-grown MQWs, the thermal activation energy and internal quantum efficiency of NRELOG MQWs exhibit 1.6-fold and 4-fold increases, respectively, which are attributed to the improvement of crystal quality by NRELOG. Furthermore, the Shockley-Read-Hall nonradiative coefficient, determined from the fits of power-dependent PL quantum efficiency, is also apparently reduced while MQWs are grown on NRELOG GaN template. The results show the feasibility to fabricate high radiative efficiency a-plane devices via NRELOG. |
| Databáze: | OpenAIRE |
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