Al/Al2O3/Al single electron transistors operable up to 30 K utilizing anodization controlled miniaturization enhancement

Autor:	D. L. Klein, Jaw Shen Tsai, Yasunobu Nakamura
Rok vydání:	1996
Předmět:	Aluminium oxides Materials science Nanostructure Fabrication Physics and Astronomy (miscellaneous) Anodizing business.industry Scattering Transistor chemistry.chemical_element Nanotechnology law.invention chemistry law Aluminium Miniaturization Optoelectronics business
Zdroj:	Applied Physics Letters. 68:275-277
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.115661
Popis:	We have developed a method, anodization controlled miniaturization enhancement (ACME), to make ultrasmall tunnel junctions. Anodization of electron‐beam fabricated Al/Al2O3/Al tunnel junctions reduces their effective areas and capacitances, which realizes single electron transistors operating at high temperatures up to nearly 30 K. The limit of the increase in the charging energy is attributed to the initial scattering in the junction sizes.
Databáze:	OpenAIRE
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