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In-grown group III (cation) vacancies (V Ga , V Al , V In ) in GaN, AlN and InN tend to be complexed with donor-type defects on the N sublattice, such as O N or the N vacancy (V N ). The cation vacancies and their complexes are generally deep acceptors, and hence they compensate for the n -type conductivity and add to the scattering centers limiting the carrier mobility in these materials. This work presents results obtained with positron annihilation spectroscopy in a variety of GaN, AlN, InN samples from different sources. The vacancy–donor complexes are different in these three materials, and their importance in determining the opto-electronic properties of the material varies as well. The formation of these defects is discussed in the light of the differences in the growth methods. |
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