Infrared ellipsometry as an investigation tool of thin layers grown into plasma immersion N+ implanted silicon
| Autor: | E. Vlaikova, E. Halova, A. Szekeres, S. Alexandrova, Petre Osiceanu, A. Marin, M. Stoica, Mariuca Gartner, Mihai Anastasescu |
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| Rok vydání: | 2012 |
| Předmět: |
Thin layers
Silicon oxynitride Materials science Silicon Silicon dioxide Annealing (metallurgy) Analytical chemistry General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound chemistry X-ray photoelectron spectroscopy Ellipsometry Silicon oxide |
| Zdroj: | Applied Surface Science. 258:7195-7201 |
| ISSN: | 0169-4332 |
| Popis: | By applying ellipsometry and extending the measurements from visible to mid infrared spectral range we examined the complex dielectric function of thin layers grown into silicon. The layers were synthesized by high-temperature (1050 °C) annealing in oxidizing ambient of plasma immersion N+ ion implanted Si substrates. Si N, Si N O and Si Si chemical bonds in the silicon oxide network were identified and confirmed by X-ray photoelectron spectroscopy (XPS). Depending on N+ fluence (1016–1018 N+/cm2) and annealing duration (10 and 20 min) the grown layers were identified either as silicon oxynitride with considerably low N content or silicon dioxide enriched with nitrogen. |
| Databáze: | OpenAIRE |
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