Characterization of rectifying contacts on natural type IIb diamond

Autor:	B. A. Fox, Michelle L. Hartsell, H. A. Wynands
Rok vydání:	1994
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Single crystal diamond Diamond engineering.material Acceptor Characterization (materials science) Charge-carrier density Type iib Rectification Depletion region engineering Optoelectronics business
Zdroj:	Applied Physics Letters. 65:430-432
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.112323
Popis:	Metal‐semiconducting diamond (MS) and metal‐insulating diamond‐semiconducting diamond (MIS) contacts were fabricated on the same type IIb single crystal diamond. Direct comparisons of MS and MIS structure characteristics were made by analysis of current‐voltage and differential capacitance‐voltage (C‐V) data. Both the MS and MIS contacts exhibited good rectifying characteristics, with a 5 V rectification ratio ≳106. The depletion layer uncompensated acceptor concentration measured in both structures by C‐V analysis was ∼1.8×1016 cm−3.
Databáze:	OpenAIRE
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