Mid-infra-red InGaAs light-emitting diodes for optical gas sensing grown on lattice-mismatched substrates

Autor:	C. Van Hoof, Gustaaf Borghs, M. R. Murti, B. Grietens
Rok vydání:	1995
Předmět:	Materials science Infrared business.industry Electroluminescence law.invention Wavelength Optics law Optoelectronics Gas detector Infrared detector Electrical and Electronic Engineering business Light-emitting diode Diode Molecular beam epitaxy
Zdroj:	Electronics Letters. 31:502-503
ISSN:	1350-911X 0013-5194
Popis:	InGaAs-InAlAs light-emitting diodes were grown on lattice-mismatched GaAs substrates by molecular beam epitaxy. This makes it possible to tune the emission to the desired wavelength by changing the composition of the grown layers. The authors' diodes exhibit efficient room-temperature emission at 1.9 mu m, necessary for optical sensing of water vapour.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1b92d5ea0ee03d907fc530ea08284648 https://doi.org/10.1049/el:19950325 Zobrazit plný text záznamu