Diffusion of tin over clean silicon surfaces

Autor:	B. Z. Olshanetsky, A. E. Dolbak
Rok vydání:	2010
Předmět:	Auger electron spectroscopy Reflection high-energy electron diffraction Materials science Silicon chemistry Solid-state physics Electron diffraction chemistry.chemical_element Atomic physics Diffusion (business) Condensed Matter Physics Tin Electronic Optical and Magnetic Materials
Zdroj:	Physics of the Solid State. 52:1293-1297
ISSN:	1090-6460 1063-7834
DOI:	10.1134/s1063783410060272
Popis:	Diffusion of tin over the (111), (100), and (110) silicon surfaces has been studied by Auger electron spectroscopy and low-energy electron diffraction. The diffusion mechanisms have been established, and the temperature dependences of the diffusion coefficients have been obtained.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1b672aacab8b89b9148064ccfe72055b https://doi.org/10.1134/s1063783410060272 Zobrazit plný text záznamu Full text from SpringerLink