Electron mobility anisotropy in InAs/GaAs(001) heterostructures
| Autor: | Toshi-kazu Suzuki, Son Phuong Le |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Electron mobility Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Heterojunction 02 engineering and technology Surface finish Electron Atmospheric temperature range Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Crystal Condensed Matter::Materials Science 0103 physical sciences 0210 nano-technology Anisotropy |
| Zdroj: | Applied Physics Letters. 118:182101 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | Electron transport properties in InAs films epitaxially grown on GaAs(001), InAs/GaAs(001) heterostructures, were systematically investigated through the dependence on crystal direction, thickness, and temperature. As a result, we found a pronounced electron mobility anisotropy, in which the mobility is highest and lowest along [ 1 1 ¯ 0 ] and [ 110 ] crystal directions, respectively. The mobility anisotropy intensifies as the InAs thickness decreases, while it diminishes in thick regimes, where the InAs films are relatively immune to effects from the epitaxial heterointerface. We observed the anisotropy in a wide temperature range, 5–395 K, with an enhancement at high temperatures. Our analysis indicates that the electron mobility anisotropy can be attributed to anisotropic electron scatterings by both interface roughness and random piezoelectric polarization near the interface. |
| Databáze: | OpenAIRE |
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