Quantum dot lasers with asymmetric barrier layers: Close-to-ideal threshold and power characteristics
| Autor: | Levon V. Asryan |
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| Rok vydání: | 2019 |
| Předmět: | |
| Zdroj: | Quantum Electronics. 49:522-528 |
| ISSN: | 1468-4799 1063-7818 |
| DOI: | 10.1070/qel17044 |
| Popis: | A theory of static (threshold and power) characteristics of novel diode lasers – quantum dot (QD) lasers with asymmetric barrier layers (ABLs) – is developed. The barrier layers are asymmetric in that they have considerably different heights for the carriers of opposite signs. The ABL located on the electron- (hole-) injecting side of the structure provides a low barrier (ideally no barrier) for electrons (holes) [so that it does not prevent electrons (holes) from easily approaching the active region] and a high barrier for holes (electrons) [so that holes (electrons) injected from the opposite side of the structure do not overcome it]. The use of ABLs should thus ideally prevent the simultaneous presence of electrons and holes (and hence parasitic electron – hole recombination) outside the QDs. It is shown in this work that in such a case of total suppression of parasitic recombination, the QD lasers with ABLs offer close-to-ideal performance: the threshold current density is below 10 A cm−2 at any temperature, the absolute value of the characteristic temperature is above 1000 K (which manifests a virtually temperature-independent operation), the internal differential quantum efficiency is practically unity, and the light – current characteristic is linear at any pump current. |
| Databáze: | OpenAIRE |
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