Gate Driver for SiC Power MOSFETs Using Soft-Switching Technique
| Autor: | Jusung Park, Hyoung-Woo Kim, Kyoungho Lee, Kihyun Kim |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry Hardware_PERFORMANCEANDRELIABILITY chemistry.chemical_compound Soft switching chemistry Control theory Hardware_INTEGRATEDCIRCUITS Overshoot (signal) Silicon carbide Gate driver Optoelectronics Electrical and Electronic Engineering Power MOSFET business Hardware_LOGICDESIGN |
| Zdroj: | Journal of Electrical Engineering & Technology. 14:1311-1319 |
| ISSN: | 2093-7423 1975-0102 |
| DOI: | 10.1007/s42835-019-00117-w |
| Popis: | In this paper, gate drive IC for SiC power MOSFETs using soft-switching technique gate drive method is designed and implemented. Designed IC is suitable for driving silicon carbide (SiC) power MOSFET. The gate drive IC using soft-switching gate drive method, which is composed of high side and low side soft-switching controller, reduce the overshoot and switching loss of the SiC power MOSFET during the turn-on period effectively. The gate drive IC using soft-switching gate drive method reduces the switching loss by 14% without increasing the overshoot magnitude. To verify the electrical characteristics of the designed IC, simulations and experiments were performed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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