Shallowing interfacial carrier trap in transition metal dichalcogenide heterostructures with interlayer hybridization
| Autor: | Jingsi Qiao, Wei Ji, Cong Wang, Xu Wu, Yan Shao, Linfei Li, Yeliang Wang, Liwei Liu, Zhong-Liu Liu, Hong-Jun Gao, Zhi-Li Zhu, Zhixin Hu |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Charge (physics) Heterojunction 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics 0104 chemical sciences Condensed Matter::Materials Science Transition metal Electrode Optoelectronics General Materials Science Density functional theory Charge carrier Electrical and Electronic Engineering 0210 nano-technology business Saturation (magnetic) Quantum tunnelling |
| Zdroj: | Nano Research. 14:1390-1396 |
| ISSN: | 1998-0000 1998-0124 |
| Popis: | With the unique properties, layered transition metal dichalcogenide (TMD) and its heterostructures exhibit great potential for applications in electronics. The electrical performance, e.g., contact barrier and resistance to electrodes, of TMD heterostructure devices can be significantly tailored by employing the functional layers, called interlayer engineering. At the interface between different TMD layers, the dangling-bond states normally exist and act as traps against charge carrier flow. In this study, we propose a technique to suppress such carrier trap that uses enhanced interlayer hybridization to saturate dangling-bond states, as demonstrated in a strongly interlayer-coupled monolayer-bilayer PtSe2 heterostructure. The hybridization between the unsaturated states and the interlayer electronic states of PtSe2 significantly reduces the depth of carrier traps at the interface, as corroborated by our scanning tunnelling spectroscopic measurements and density functional theory calculations. The suppressed interfacial trap demonstrates that interlayer saturation may offer an efficient way to relay the charge flow at the interface of TMD heterostructures. Thus, this technique provides an effective way for optimizing the interface contact, the crucial issue exists in two-dimensional electronic community. |
| Databáze: | OpenAIRE |
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