Single-Crystalline Si STacked ARray (STAR) NAND Flash Memory
| Autor: | Garam Kim, Jong-Ho Lee, Yoon Kim, Joung-Eob Lee, Wonbo Shim, Byung-Gook Park, Hyungcheol Shin, Jang-Gn Yun, Jong Duk Lee |
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| Rok vydání: | 2011 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Materials science Fabrication business.industry Nanowire Process (computing) Flash memory Electronic Optical and Magnetic Materials Silicon-germanium chemistry.chemical_compound chemistry Logic gate Charge trap flash Electronic engineering Optoelectronics Non-volatile random-access memory Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 58:1006-1014 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2011.2107557 |
| Popis: | In this paper, a 3-D NAND Flash memory array having multiple single-crystal Si nanowires is investigated. Device structure and fabrication process are described including the electrical isolation of stacked nanowires. Numerical simulation results focused on NAND Flash memory operation are delivered. Devices and array with stacked bit lines are fabricated, and memory characteristics such as program/erase select gate operation are measured. Array scheme is also discussed for the high-density bit-cost scalable 3-D stacked bit-line NAND Flash memory application. |
| Databáze: | OpenAIRE |
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