MBE growth and interfacial reaction control of ferromagnetic metal/GaAs heterostructures

Autor: Brian D. Schultz, Kathy Lüdge, J. Lu, J. Q. Xie, X.Y. Dong, D. M. Carr, S. McKernan, Jinming Dong, Y. Xin, T. C. Shih, Chris Palmstrom
Rok vydání: 2003
Předmět:
Zdroj: International Conference on Molecular Bean Epitaxy.
DOI: 10.1109/mbe.2002.1037787
Popis: Summary form only given. We have investigated the epitaxial growth of a number of Heusler alloys (Ni,Co)/sub 2/Mn(Al,Ga,ln,Ge) and Fe/sub l-x/Co/sub x/ on Ga/sub 1-x/In/sub x/As. X-ray diffraction and cross-sectional TEM indicated single crystal ferromagnetic film growth. The magnetic properties were measured by vibrating sample and superconducting quantum interference device magnetometers. The Heusler alloy heterostructures showed in-plane magnetization and Curie temperatures /spl sim/300K. The effects of growth conditions and the use of interfacial layers on the chemical ordering, interfacial reactions and the structural and magnetic properties will be discussed.
Databáze: OpenAIRE