Germanium-on-insulator substrates by wafer bonding
| Autor: | Albert Lamm, Philip James Ong, Clarence J. Tracy, Igor J. Malik, Anthony Paler, Eric S. Johnson, Peter Fejes, Papu D. Maniar, N. David Theodore |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Fabrication
Materials science Silicon Wafer bonding business.industry chemistry.chemical_element Germanium Surface finish Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Crystallography chemistry Optical microscope law Transmission electron microscopy Materials Chemistry Optoelectronics Wafer Electrical and Electronic Engineering business |
| Zdroj: | Journal of Electronic Materials. 33:886-892 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | Single-crystal Ge-on-insulator (GOI) substrates, made by bonding a hydrogen-implanted Ge substrate to a thermally oxidized, silicon handle wafer, are studied for properties relevant to device fabrication. The stages of the layer transfer process are examined through transmission electron microscopy (TEM) from the initial hydrogen implant through the final Ge film polish. The completed GOI substrate is characterized for film uniformity, surface quality, contamination, stress, defectivity, and thermal robustness using a variety of techniques and found to be acceptable for initial device processing. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink