InP/InGaAs heterojunction bipolar transistors grown on Ge/P co-implanted InP substrates by metal-organic molecular beam epitaxy

Autor:	D.J. Werder, Mau-Chung Frank Chang, C.T. Liu, W.J. Sung, Y.K. Chen, R.F. Kopf, J. Chen, E.J. Zhu
Rok vydání:	2003
Předmět:	Materials science business.industry Heterojunction bipolar transistor Doping Bipolar junction transistor Heterojunction Epitaxy Gallium arsenide chemistry.chemical_compound Ion implantation chemistry Optoelectronics business Molecular beam epitaxy
Zdroj:	Proceedings. IEEE Lester Eastman Conference on High Performance Devices.
DOI:	10.1109/lechpd.2002.1146758
Popis:	InP/InGaAs Heterojunction Bipolar Transistors (HBTs) have demonstrated excellent high-frequency performance and are widely used for optical fiber transmission. However, the current mesa HBT structure utilizes a very thick, highly doped n/sup +/InGaAs layer for the subcollector contact. This added mesa height makes multi-level interconnection processes more difficult, which impedes the capability of fabricating compact integrated circuits. In addition, InP has a much higher thermal conductivity than InGaAs, so heat dissipation may be a problem for densely packed circuits with the above structure. This paper reports on InP/InGaAs HBTs grown on Ge/P co-implanted substrates by Metal-Organic Molecular Beam Epitaxy (MOMBE). This embedded subcollector HBT structure offers several advantages for the fabrication of large-scale integrated circuits on InP substrates.
Databáze:	OpenAIRE
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