Photoluminescence decay in a-Si: H/a-Si3N4: H multilayers
| Autor: | Atuko Yamaguchi, Kazuro Murayama, Seiichi Miyazaki |
|---|---|
| Rok vydání: | 1989 |
| Předmět: |
Fractal network
Physics Chemical substance Photoluminescence Condensed matter physics Condensed Matter::Other General Chemical Engineering Diffusion Exciton General Physics and Astronomy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Random walk Molecular physics Decay curve Condensed Matter::Materials Science Recombination |
| Zdroj: | Philosophical Magazine B. 60:137-152 |
| ISSN: | 1463-6417 1364-2812 |
| DOI: | 10.1080/13642818908228822 |
| Popis: | Photoluminescence decay has been studied for five a-Si: H/a-Si3N4: H multilayer structures with different well-layer thicknesses of 8, 13, 25, 50 and 400 A and a common barrier-layer thickness of 100 A. The decay curves are compared with that observed for an a-Si: H film with a thickness of 1 pm. At liquid-helium temperature the photoluminescence has a long effective decay time of 2·5 × 10−3s and this is interpreted in terms of recombination of localized excitons. Above liquid-nitrogen temperature the photoluminescence can be described by a double hyperbolic decay function and interpreted as exciton recombination combined with dispersive diffusion originating from a fractal-time random walk and a random walk on a fractal network. |
| Databáze: | OpenAIRE |
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