Graphene structuration by self-assembly of high-χ block copolymers
Autor: | Gilles Cunge, Sophie Böhme, Javier Arias-Zapata, Marc Zelsmann, Hanako Okuno, Jérôme Garnier, Djawhar Ferrah, O. Mouray |
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Rok vydání: | 2017 |
Předmět: |
Materials science
Fabrication Plasma etching Polydimethylsiloxane Graphene Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention chemistry.chemical_compound Nanolithography Nanoelectronics chemistry law 0103 physical sciences Thin film 010306 general physics 0210 nano-technology Graphene nanoribbons |
Zdroj: | Materials Today: Proceedings. 4:6827-6834 |
ISSN: | 2214-7853 |
DOI: | 10.1016/j.matpr.2017.07.010 |
Popis: | Large-area graphene is not suitable for digital logic applications because its bandgap is zero. Graphene structuration into sub-10nm width nanoribbons (GNRs) can open up a bandgap (>0.4eV) for operational nanoelectronics devices such as field-effect transistors (FETs). However, fabricating circuits with sub-10nm aligned GNR arrays remains a technological challenge. Block copolymer (BCP) self-assembly is a highly promising nanolithography technique in terms of throughput, cost and high resolution patterning. We fabricated 8nm width ( w ) GNRs using cylinder forming BCP thin films of polystyrene- block -polydimethylsiloxane (PS- b -PDMS). The fabrication includes the direct spin-coating on graphene and a thermal treatment to trigger the self-assembly. By using an O 2 plasma etching, a triple functionality is achieved: the PS matrix is removed, the PDMS block is oxidized and the PDMS pattern is transferred into graphene. The lithographic mask is finally removed out by wet etching and dedicated hydrogen plasma. AFM and Raman spectroscopy are used to demonstrate the formation of GNRs since w correspond to the width of the PDMS block of the BCP. The method presented could be generalise to fabricate other graphene nanostructures which could be employed to design FETs and photodetectors. |
Databáze: | OpenAIRE |
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