D.c. and microwave characteristics of In0.32Al0.68As/In0.33Ga0.67As heterojunction bipolar transistors grown on GaAs
| Autor: | Jen-Inn Chyi, Jia Lin Shieh, H.P. Hwang |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Materials science
Heterostructure-emitter bipolar transistor business.industry Bipolar junction transistor Doping Heterojunction Condensed Matter Physics Electronic Optical and Magnetic Materials Materials Chemistry Optoelectronics Breakdown voltage Electrical and Electronic Engineering business Current density Microwave Common emitter |
| Zdroj: | Solid-State Electronics. 43:463-468 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(98)00310-4 |
| Popis: | The d.c. and microwave characteristics of graded and abrupt junction In 0.32 Al 0.68 As/In 0.33 Ga 0.67 As heterojunction bipolar transistors (HBTs) grown on GaAs were investigated. A step-graded In x Ga 1− x As buffer was employed to effectively suppress the threading dislocations resulting from the lattice mismatch between In 0.33 Ga 0.67 As and GaAs. These devices exhibited a small turn-on voltage of collector current and a high collector–emitter breakdown voltage (BV CEO >9.5 V) for a 0.35 μm-thick collector, demonstrating excellent quality of the base–emitter and base–collector junctions. Less size-dependence on current gain was observed for these metamorphic HBTs even without the emitter ledge. The peak common-emitter current gain at a collector current density of 40 kA/cm 2 is 53 for the graded junction device with an emitter size of 2×4 μm 2 and a base doping of 2×10 19 cm −3 . An F max of 56 GHz was measured for this device. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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