The Study of Nanoindentation of Atomically Flat GaAs Surface using the Tip of Atomic-Force Microscope
| Autor: | Pavel N. Brunkov, I. A. Ermakov, S. G. Konnikov, A. A. Gutkin, N. D. Prasolov, V. A. Solov’ev, Leonid M. Dorogin |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Range (particle radiation) Microscope Materials science business.industry Resolution (electron density) 02 engineering and technology Nanoindentation 021001 nanoscience & nanotechnology Condensed Matter Physics Kinetic energy 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Molecular dynamics law Indentation 0103 physical sciences Fracture (geology) Optoelectronics 0210 nano-technology business |
| Zdroj: | Semiconductors. 53:2110-2114 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | It was shown that the nanoindentation treatment of the atomically flat GaAs surface with the tip of atomic-force microscope in contact mode allows to produce small size pits with the depth in the range from a few tenths of nm up to a 1.5 nm. The experimental data can be qualitatively described on the base of kinetic concept of fracture of solid state developed by Zhurkov, which suppose the generation of defects and subsequent destruction of the GaAs surface. The molecular dynamics modelling confirmed thermally activated destruction of a few top atomic layers under indentation. The presented technology could be used to form the shape of solid state surfaces with subnanometer resolution in depth without wet etching processes. |
| Databáze: | OpenAIRE |
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