An equivalent heterojunction-like model for polysilicon emitter bipolar transistor
| Autor: | Hong-Fei Ye, Yu-Zhi Gao, Lichun Zhang, Haiyan Jin |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
business.industry Heterostructure-emitter bipolar transistor Polysilicon depletion effect Bipolar junction transistor Transistor Electrical engineering Condensed Matter Physics Oxide thin-film transistor Computer Science::Other Electronic Optical and Magnetic Materials law.invention law Thin-film transistor Materials Chemistry Physics::Accelerator Physics Optoelectronics Electrical and Electronic Engineering business Common emitter Static induction transistor |
| Zdroj: | Solid-State Electronics. 47:1719-1727 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(03)00153-9 |
| Popis: | A new method was presented in this article to explain high current gain of polysilicon emitter transistor. By regarding interfacial oxide between polysilicon emitter and silicon emitter as a wide band gap material which can limit minority transport from silicon to polysilicon, thus improve emitter injection efficiency and increase current gain, the characteristics of RCA transistor (a ultra-thin interfacial oxide layer exists between polysilicon and silicon emitter) can be explained expediently. The theory also applied to HF transistor by treating difference band gap ΔEg between interfacial material and silicon as zero. Comparison between experimental and theoretical results was made and they are accordant. Through equivalent model ΔEg of a RCA transistor can be estimated as 101 meV. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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