Status of LWIR HgCdTe-on-Silicon FPA Technology
| Autor: | Whitney Mason, Yuanping Chen, S. Freeman, R. N. Jacobs, D. D. Edwall, Jose M. Arias, E. Piquette, M. Kangas, Andrew J. Stoltz, J. G. Pasko, M. Carmody, Nibir K. Dhar |
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| Rok vydání: | 2008 |
| Předmět: |
Silicon
business.industry Detector chemistry.chemical_element Photodetector Substrate (electronics) Condensed Matter Physics Epitaxy Noise (electronics) Electronic Optical and Magnetic Materials Optics chemistry Materials Chemistry Optoelectronics Infrared detector Electrical and Electronic Engineering business Molecular beam epitaxy |
| Zdroj: | Journal of Electronic Materials. 37:1184-1188 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-008-0434-3 |
| Popis: | The use of silicon as an alternative substrate to bulk CdZnTe for epitaxial growth of HgCdTe for infrared detector applications is attractive because of potential cost savings as a result of the large available sizes and the relatively low cost of silicon substrates. However, the potential benefits of silicon as a substrate have been difficult to realize because of the technical challenges of growing low-defect-density HgCdTe on silicon where the lattice mismatch is ∼19%. This is especially true for long-wavelength infrared (LWIR) HgCdTe detectors where the performance can be limited by the high (∼5 × 106 cm−2) dislocation density typically found in HgCdTe grown on silicon. The current status of LWIR (9 μm to 11 μm at 78 K) HgCdTe on silicon focal-plane arrays (FPAs) is reviewed. Recent progress is covered including improvements in noise equivalent differential temperature (NEDT) and array operability. NEDT of 99% are highlighted for 640 × 480 pixel, 20-μm-pitch FPAs. |
| Databáze: | OpenAIRE |
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