Hillock formation in InP epitaxial layers: A mechanism based on dislocation/stacking fault interactions
| Autor: | C. Pelosi, R. Gleichmann, C. Frigeri |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Condensed matter physics Scanning electron microscope Hydride Metals and Alloys Stacking Mechanism based Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Crystallography General Materials Science Dislocation Stacking fault Hillock |
| Zdroj: | Philosophical Magazine A. 62:103-114 |
| ISSN: | 1460-6992 0141-8610 |
| DOI: | 10.1080/01418619008244338 |
| Popis: | Transmission and scanning electron microscopy have been used to study mechanisms of hillock growth in InP homo-epitaxial layers grown by the hydride VPE technique. Stacking faults in conjunction with dislocations were found to be the main sources of hillock formation in such epilayers. The stacking fault/dislocation interaction has been considered theoretically to understand better the details of the involved mechanisms of dislocation aggregation and pinning. According to the Burton-Cabrera-Frank mechanism the local concentration of dislocations results in a higher growth speed in these areas via spiral growth. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|