Short-Channel Double-Gate FETs with Atomically Precise Graphene Nanoribbons

Autor:	Z. Mutlu, Y. Lin, G. B. Barin, Z. Zhang, G. Pitner, S. Wang, R. Darawish, M. Di Giovannantonio, H. Wang, J. Cai, M. Passlack, C. H. Diaz, A. Narita, K. Mullen, F. R. Fischer, P. Bandaru, A. C. Kummel, P. Ruffieux, R. Fasel, J. Bokor
Rok vydání:	2021
Zdroj:	2021 IEEE International Electron Devices Meeting (IEDM).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1b0978b0cf46ea64d49d863bf994892c https://doi.org/10.1109/iedm19574.2021.9720620 Zobrazit plný text záznamu