Self-consistent simulation on multiple activation energy of retention characteristics in charge trapping flash memory
| Autor: | Seong-Wook Choi, Kwang Sun Jun, Young June Park, HuiJung Kim, Sungman Rhee, Sang-Yong Park |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
Oxide Activation energy Trapping Atmospheric temperature range Nitride Condensed Matter Physics Molecular physics Flash memory Electronic Optical and Magnetic Materials Flash (photography) chemistry.chemical_compound chemistry Materials Chemistry Electronic engineering Electrical and Electronic Engineering Data retention |
| Zdroj: | Solid-State Electronics. 113:144-150 |
| ISSN: | 0038-1101 |
| Popis: | Non-Arrhenius behavior has been reported in a various temperature range for the retention time of CT Flash memories. In order to understand the physical origin of the multiple activation energy due to the non-Arrhenius behavior, we conduct a simulation study using a 3D self-consistent numerical simulator developed in-house. As a result, it is found that both vertical and lateral charge transport in the conduction band of nitride layer are responsible for the non-Arrhenius retention characteristic. Also, the tunneling current through the bottom oxide and a lifetime criteria are turned out to be the key parameters which determine the multiple activation energy. |
| Databáze: | OpenAIRE |
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