| Popis: |
In this study, the changes in the performance parameters of silicon photovoltaic cells were investigated before and after irradiation. For this aim, the current-voltage and power-voltage characteristics of structures were obtained before and after irradiation. The electrical parameters were determined using obtained characteristics. High energetic (24.5 MeV) proton beam was used as the radiation source. In addition, radiation-induced displacement damages were determined using SRIM/TRIM simulations, and the effect of these damages on the photovoltaic cell was investigated. This study, which depends on the radiation hardness as a result of irradiation with protons, was important. Because the displacement damage caused changes on the electrical properties of device. This behavior was attributed to the defects generated by proton irradiation. On the other hand, it was seen that proton irradiation can be a tool for controlling the material and cell properties. |
