Significant Differences in BTI and TDDB Characteristics of Commercial Planar SiC-MOSFETs

Autor: Eiichi Murakami, Tatsuya Takeshita, Kazuhiro Oda
Rok vydání: 2022
Předmět:
Zdroj: Materials Science Forum. 1062:642-646
ISSN: 1662-9752
DOI: 10.4028/p-xz45c3
Popis: Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have been produced by several vendors for commercial applications. SiC-MOSFET reliability was assessed using bias-temperature instability (BTI) and time-dependent dielectric breakdown (TDDB) characteristics. Here, we compared two planar SiC-MOSFET samples (A and B) from different vendors. The samples exhibited significantly different positive and negative BTI, time-dependent gate-current, TDDB lifetime statistics, and temperature dependence. These differences suggest NO (nitric oxide)-annealing variations.
Databáze: OpenAIRE